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Appl. Phys. Express 3 (2010) 061003 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on c-Plane GaN

Adrian Avramescu, Teresa Lermer, Jens Müller, Christoph Eichler, Georg Bruederl, Matthias Sabathil, Stephan Lutgen, and Uwe Strauss

Osram Opto-Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

(Received May 5, 2010; accepted May 10, 2010; published online June 4, 2010)

We pushed direct green laser diodes towards longer wavelengths at 524–532 nm based on improvements of epitaxial design and material quality on c-plane GaN substrate. Mounted ridge laser diodes show significant performance improvement in cw operation. For 524 nm laser, wall plug efficiency up to 2.3% at 50 mW optical output power is achieved. In pulse mode operation we demonstrate broad-area test lasers with an emission wavelength of 531.7 nm. Nonpolar and polar substrates are compared with respect to indium content in InGaN quantum wells. The limiting factors for achieving longer wavelengths and better performance of green lasers are discussed from this viewpoint. ©2010 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/3/061003/
DOI: 10.1143/APEX.3.061003


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References | Citing Article (1)

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