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Appl. Phys. Express 2 (2009) 112101 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation

Wei-Sin Tan, Koji Takahashi1, Valerie Bousquet, Akira Ariyoshi2, Yuhzoh Tsuda1, Masataka Ohta1, and Matthias Kauer

Sharp Laboratories of Europe Ltd., Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, U.K.
1Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
2Electronic Components and Devices Group, Sharp Corporation, 247 Soujo, Nutanishi-cho, Mihara, Hiroshima 729-0474, Japan

(Received August 28, 2009; accepted October 6, 2009; published online October 30, 2009)

We report on a novel method using lattice matched AlInN as the current confinement layer for inner stripe laser diodes. Optimisation of the sample preparation techniques and metal organic chemical vapor deposition (MOCVD) regrowth conditions resulted in an inner stripe laser diode with threshold current density of ∼3.3–3.5 kA/cm2 and slope efficiency of 1.6 W/A. The cw lifetime and other characteristics of the inner stripe laser diode are discussed. Simulation data have also shown that this structure is beneficial for reducing operating voltage when compared to a conventional ridge waveguide structure. ©2009 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/2/112101/
DOI: 10.1143/APEX.2.112101


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