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Appl. Phys. Express 2 (2009) 111004 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy

Jiejun Wu, Kazuteru Okuura, Hideto Miyake, and Kazumasa Hiramatsu

Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan

(Received September 29, 2009; accepted October 21, 2009; published online November 13, 2009)

We investigated the direct growth of c-plane AlN on sapphire (11.0) and (00.1) substrates by low-pressure hydride vapor phase epitaxy (LP-HVPE) without using any buffer, interlayer, or pulsed source supply. The a-plane sapphire was confirmed to be effective for obtaining high-quality AlN with an rms surface roughness of 0.156 nm for 2×2 µm2 scan and a large crack-free thickness of 3.6 µm. This was partly attributed to the hexagonal c-axis of a-sapphire substrate being perpendicular to the hexagonal c-axis of AlN, leading to the reduced twist degree of AlN. X-ray rocking curves yielded full widths at half maximum (FWHM) of 487 and 636 arcsec for (10.2) and (10.0) reflections, respectively, indicating a low edge dislocation density (reduced twist degree) in the film. ©2009 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/2/111004/
DOI: 10.1143/APEX.2.111004


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References

  1. J. Li, Z. Y. Fan, R. Dahal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang: Appl. Phys. Lett. 89 (2006) 213510[AIP Scitation].
  2. M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh: J. Cryst. Growth 300 (2007) 136[CrossRef].
  3. K. I. Eriguchi, T. Hiratsuka, H. Murakami, Y. Kumagai, and A. Koukitu: J. Cryst. Growth 310 (2008) 4016[CrossRef].
  4. S. A. Newman, D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars: Appl. Phys. Lett. 94 (2009) 121906[AIP Scitation].
  5. M. Imura, K. Nakano, T. Kitano, N. Fujimoto, G. Narita, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki: Appl. Phys. Lett. 89 (2006) 221901[AIP Scitation].
  6. J. Mei, F. A. Ponce, R. S. Q. Fareed, J. W. Yang, and M. A. Khan: Appl. Phys. Lett. 90 (2007) 221909[AIP Scitation].
  7. Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. DenBaars, and S. Nakamura: Appl. Phys. Lett. 93 (2008) 191906[AIP Scitation].
  8. M. Takeuchi, S. Ooishi, T. Ohtsuka, T. Maegawa, T. Koyama, S. F. Chichibu, and Y. Aoyagi: Appl. Phys. Express 1 (2008) 021102[IPAP].
  9. J. Bai, M. Dudley, W. H. Sun, H. M. Wang, and M. A. Khan: Appl. Phys. Lett. 88 (2006) 051903[AIP Scitation].
  10. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku: Appl. Phys. Lett. 69 (1996) 1568[AIP Scitation].
  11. T. Someya, K. Hoshino, and Y. Arakawa: Appl. Phys. Lett. 79 (2001) 1992[AIP Scitation].
  12. H. K. Chauveau, P. D. Mierry, H. Cabane, and D. Gindhart: J. Appl. Phys. 104 (2008) 113516[AIP Scitation].
  13. T. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, B. Monemar, and M. Heuken: J. Cryst. Growth 257 (2003) 1[CrossRef].
  14. J. Xu, J. S. Thakur, G. Hu, Q. Wang, Y. Danylyuk, H. Ying, and G. W. Auner: Appl. Phys. A 83 (2006) 411[CrossRef].
  15. Y. H. Liu, T. Tanabe, H. Miyake, K. Hiramatsu, T. Shibata, M. Tanaka, and Y. Masa: Jpn. J. Appl. Phys. 44 (2005) L505[IPAP].
  16. P. Gay, P. B. Hirsch, and A. Kelly: Acta Metall. 1 (1953) 315.
  17. X. H. Zheng, H. Chen, Z. B. Yan, Y. J. Han, H. B. Yu, D. S. Li, Q. Huang, and J. M. Zhou: J. Cryst. Growth 255 (2003) 63[CrossRef].
  18. K. Tsujisawa, S. Kishino, D. B. Li, H. Miyake, K. Hiramatsu, T. Shibata, and M. Tanaka: Jpn. J. Appl. Phys. 46 (2007) L552[IPAP].
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