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Appl. Phys. Express 2 (2009) 092102 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region

Vinod Adivarahan, Ahmad Heidari, Bin Zhang, Qhalid Fareed, Monirul Islam1, Seongmo Hwang1, Krishnan Balakrishnan1, and Asif Khan1

Nitek, Inc., 1804 Salem Church Road, Irmo, SC 29063, U.S.A.
1Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.

(Received June 27, 2009; accepted July 30, 2009; published online September 4, 2009)

Vertically conducting thin film high power deep ultraviolet (DUV) light emitting diodes with peak emission wavelength of 280 nm are reported. The light emitting diodes (LEDs) were fabricated using a laser assisted lift-off process. Single chip devices exhibited a record high output power of 5.5 mW at a continuous-wave (cw) current density of only 25 A/cm2. Their lifetime is estimated to be well over 2000 h. We attribute the superior performance of the devices to reduced thermal impedance and the vertical current conduction device geometry. ©2009 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/2/092102/
DOI: 10.1143/APEX.2.092102


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References | Citing Articles (2)

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