Appl. Phys. Express 2 (2009) 092101 (3 pages) |Previous Article| |Next Article| |Table of Contents|
|Full Text PDF: FREE (270K)|
Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
Yusuke Yoshizumi,
Masahiro Adachi,
Yohei Enya,
Takashi Kyono,
Shinji Tokuyama,
Takamichi Sumitomo,
Katsushi Akita,
Takatoshi Ikegami,
Masaki Ueno,
Koji Katayama, and
Takao Nakamura
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
(Received July 16, 2009; accepted July 23, 2009; published online August 21, 2009)
Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm2 and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on {2021} GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure.
©2009 The Japan Society of Applied Physics
URL:
http://apex.ipap.jp/link?APEX/2/092101/
DOI: 10.1143/APEX.2.092101
- D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß:
Appl. Phys. Lett. 94 (2009) 081119[AIP Scitation].
- T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai:
Appl. Phys. Express 2 (2009) 062201[IPAP].
- S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
Appl. Phys. Lett. 69 (1996) 4188[AIP Scitation].
- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki:
Jpn. J. Appl. Phys. 36 (1997) L382[IPAP].
- K. Kojima, M. Funato, Y. Kawakami, H. Braun, U. T. Schwarz, S. Nagahama, and T. Mukai:
Phys. Status Solidi C 5 (2008) 2126[CrossRef].
- K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota:
Appl. Phys. Lett. 94 (2009) 071105[AIP Scitation].
- Y. Tsuda, M. Ohta, P. O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, and T. Yuasa:
Appl. Phys. Express 1 (2008) 011104[IPAP].
- K. M. Kelchner, Y.-D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars:
Appl. Phys. Express 2 (2009) 071003[IPAP].
- A. Tyagi, H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura:
Jpn. J. Appl. Phys. 46 (2007) L444[IPAP].
- H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura:
Appl. Phys. Express 2 (2009) 021002[IPAP].
- A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce:
Appl. Phys. Express 2 (2009) 041002[IPAP].
- Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura:
Appl. Phys. Express 2 (2009) 082101[IPAP].
- S. Fujikawa, T. Takano, Y. Kondo, and H. Hirayama:
Phys. Status Solidi C 5 (2008) 2280[CrossRef].
- K. Tachibana, Y. Harada, S. Saito, S. Nunoue, H. Katsuno, C. Hongo, G. Hatakoshi, and M. Onomura: Mater. Res. Soc. Symp. Proc. 798 (2003) 799.
- K. Okamoto, T. Tanaka, M. Kubota, and H. Ohta:
Jpn. J. Appl. Phys. 46 (2007) L820[IPAP].
- L. Q. Zhang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, and H. Yang:
J. Appl. Phys. 105 (2009) 023104[AIP Scitation].
- H. Masui, H. Asamizu, A. Tyagi, N. F. DeMille, S. Nakamura, and S. P. DenBaars:
Appl. Phys. Express 2 (2009) 071002[IPAP].
- S. Nagahama, T. Yanamoto, M. Sano, and T. Mukai:
Jpn. J. Appl. Phys. 40 (2001) 3075[IPAP].
