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Appl. Phys. Express 2 (2009) 085502 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Preparation of Layered-Rhombohedral LiCoO2 Epitaxial Thin Films Using Pulsed Laser Deposition

Tetsukazu Tsuruhama1, Taro Hitosugi2,3, Hideki Oki4, Yasushi Hirose1,3, and Tetsuya Hasegawa1,3

1Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
2WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
3Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012, Japan
4Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan

(Received May 27, 2009; accepted June 23, 2009; published online July 17, 2009)

Epitaxial thin films of layered-rhombohedral LiCoO2 (α-NaFeO2 structure, R3m) have been successfully grown on Al2O3(0001) substrates using pulsed laser deposition. A single phase of LiCoO2 was obtained in the narrow substrate temperature range of 250–300 °C, above which secondary phases, such as Co2O3, Co3O4, and LiCo2O4, appeared. In addition, it was found that annealing of precursor films deposited at room temperature yielded atomically flat LiCoO2 films with a surface roughness of ∼0.2 nm. ©2009 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/2/085502/
DOI: 10.1143/APEX.2.085502


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