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Appl. Phys. Express 2 (2009) 082102 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate

You-Da Lin1, Matthew T. Hardy2, Po Shan Hsu2, Kathryn M. Kelchner1, Chia-Yen Huang2, Daniel A. Haeger2, Robert M. Farrell1, Kenji Fujito3, Arpan Chakraborty2, Hiroaki Ohta2, James S. Speck2, Steven P. DenBaars1,2, and Shuji Nakamura1,2

1Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
2Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
3Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

(Received June 13, 2009; accepted July 7, 2009; published online July 24, 2009)

Nonpolar blue-green (481 nm) InGaN/GaN laser diodes (LDs) were realized by using m-plane GaN substrates with a misorientation angle of approximately 1° toward [0001] direction. The laser diode structures grown on miscut m-plane GaN substrates showed significantly smoother surface morphology compared to structures grown on nominally on-axis m-plane GaN substrates. It is contributed to lower threshold current densities, longer lasing wavelength, and higher lasing yield than those on on-axis substrates grown by the same growth condition. Material improvement based on the control of substrate misorientation is essential to achieve high performance LDs beyond the blue spectral range. ©2009 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/2/082102/
DOI: 10.1143/APEX.2.082102


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