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531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates
Yohei Enya,
Yusuke Yoshizumi,
Takashi Kyono,
Katsushi Akita,
Masaki Ueno,
Masahiro Adachi,
Takamichi Sumitomo,
Shinji Tokuyama,
Takatoshi Ikegami,
Koji Katayama, and
Takao Nakamura
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
(Received June 19, 2009; accepted June 25, 2009; published online July 17, 2009)
Lasing in pure green region around 520 nm of InGaN based laser diodes (LDs) on semi-polar {2021} free-standing GaN substrates was demonstrated under pulsed operation at room temperature. The longest lasing wavelength reached to 531 nm and typical threshold current density was 8.2 kA/cm2 for 520 nm LDs. Utilization of a novel {2021} plane enabled a fabrication of homogeneous InGaN quantum wells (QWs) even at high In composition, which is exhibited with narrower spectral widths of spontaneous emission from LDs than those on other planes. The high quality InGaN QWs on the {2021} plane advanced the realization of the green LDs.
©2009 The Japan Society of Applied Physics
URL:
http://apex.ipap.jp/link?APEX/2/082101/
DOI: 10.1143/APEX.2.082101
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