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Appl. Phys. Express 2 (2009) 071004 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Atsushi Nishikawa, Takashi Kawasaki, Naoki Furukawa, Yoshikazu Terai, and Yasufumi Fujiwara

Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

(Received June 3, 2009; accepted June 8, 2009; published online June 26, 2009)

We have succeeded in the growth of europium (Eu)-doped GaN layer grown by organometallic vapor-phase epitaxy (OMVPE) and demonstrated the first low-voltage operation of current-injected red emission from a p-type/Eu-doped/n-type GaN light-emitting diode (LED) at room temperature. The bright red emission was obtained with an applied voltage as low as 3 V under normal lighting conditions. At a dc current of 20 mA, the output power, integrated over the 5D0–7F2 transition in Eu3+ ions (around 621 nm), was 1.3 µW. This result suggests a novel way to realize GaN-based red LEDs and monolithic devices comprising red, green and blue GaN-based LEDs. ©2009 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/2/071004/
DOI: 10.1143/APEX.2.071004


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