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510–515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
Takashi Miyoshi,
Shingo Masui,
Takeshi Okada,
Tomoya Yanamoto,
Tokuya Kozaki,
Shin-ichi Nagahama, and
Takashi Mukai
Nitride Semiconductor Research Laboratory, Opto-Electronics Products Division, Nichia Corp., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
(Received April 10, 2009; accepted April 27, 2009; published online May 22, 2009)
We succeeded in developing InGaN-based green laser diodes (LDs) with a wavelength of 515 nm under continuous-wave (cw) operation by improving the growth condition of epitaxial layers and structures of LDs. The LD structures were grown on conventional c-plane free-standing GaN substrates by metal organic chemical vapor deposition (MOCVD). The threshold current and threshold voltage at 515 nm were 53 mA and 5.2 V, respectively. The lifetime of 510–513 nm LDs was estimated to be over 5000 h under cw operation with an optical output power of 5 mW at 25 °C.
©2009 The Japan Society of Applied Physics
URL:
http://apex.ipap.jp/link?APEX/2/062201/
DOI: 10.1143/APEX.2.062201
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