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Appl. Phys. Express 1 (2008) 111203 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Electronic Band Structure of Transparent Conductor: Nb-Doped Anatase TiO2

Taro Hitosugi1,2, Hideyuki Kamisaka3, Koichi Yamashita3, Hiroyuki Nogawa4, Yutaka Furubayashi2, Shoichiro Nakao2, Naoomi Yamada2, Akira Chikamatsu5, Hiroshi Kumigashira5, Masaharu Oshima5, Yasushi Hirose2,4, Toshihiro Shimada2,4, and Tetsuya Hasegawa2,4

1Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
2Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012, Japan
3Department of Chemical System Engineering, The University of Tokyo, Tokyo 113-8656, Japan
4Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan
5Department of Applied Chemistry, The University of Tokyo, Tokyo 113-8656, Japan

(Received October 6, 2008; accepted October 25, 2008; published online November 14, 2008)

We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means of first-principles band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitals are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 1021 cm-3 and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and core-level photoemission measurements are consistent with prediction by the present band calculations. ©2008 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/1/111203/
DOI: 10.1143/APEX.1.111203


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