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Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO3 Films on (001)Pt/SrTiO3

Damien S. Boesch, Junwoo Son, James M. LeBeau, Joël Cagnon, and Susanne Stemmer

Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.

(Received August 3, 2008; accepted August 22, 2008; published online September 12, 2008)

Epitaxial, (001)-oriented SrTiO3 thin films were grown by sputtering on (001)Pt/SrTiO3 substrates to thicknesses ranging from 20 to 160 nm. Their dielectric properties were studied using parallel-plate capacitor structures. For film thicknesses greater than 40 nm, the thickness dependence of the capacitance density could be described with a model of low-permittivity interfacial layers that are connected in series with the bulk of the film. Thinner films showed a deviation from the linear relationship between the inverse capacitance density and thickness. They also showed an increase in loss and a small, power-law frequency dependence of the capacitance. These changes were indicative of different bulk dielectric properties of the thinnest SrTiO3 films. ©2008 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/1/091602/
DOI: 10.1143/APEX.1.091602


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