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Appl. Phys. Express 1 (2008) 061603 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Epitaxial SrTiO3 Tunnel Barriers on Pt/MgO Substrates

Junwoo Son, Joël Cagnon, Damien S. Boesch, and Susanne Stemmer

Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.

(Received April 26, 2008; accepted May 15, 2008; published online June 6, 2008)

Tunnel junction devices employing epitaxial, (001)-oriented SrTiO3 barriers with thicknesses between 4 and 5 nm were fabricated by sputtering on (001) Pt/MgO substrates. The quality of the Pt/SrTiO3 interface was characterized by transmission electron microscopy and the current transport studied as a function of temperature and bias field. At low voltages the junctions showed excellent insulting properties and temperature dependent, non-linear current–voltage characteristics. If junctions were biased to high fields (>1.25 MV/cm) current hysteresis was observed. The hysteresis is shown to be due to time-dependent tunnel barrier properties at high fields. ©2008 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/1/061603/
DOI: 10.1143/APEX.1.061603


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