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Appl. Phys. Express 1 (2008) 024002 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation

Naoki Harada, Mari Ohfuti, and Yuji Awano

Nanotechnology Research Center, Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan

(Received November 16, 2007; accepted December 28, 2007; published online February 1, 2008)

A semiclassical Monte Carlo simulation was run to estimate the performances of a monolayer and a bilayer (with vertical electric field of 1 V/nm applied) graphene-channel field-effect transistor (FET). The vertical field produces a band gap of 0.16 eV and gives semiconductive properties in the bilayer graphene. Electrons in monolayer graphene show a notable velocity overshoot of up to 7.6×107 cm/s. A sub-0.1 ps transit time is also expected in a 65-nm channel device. The performance of a bilayer graphene-channel FET is inferior to a monolayer graphene one, but comparable with that of an InP high electron mobility transistor (HEMT). This lower performance may be attributed to the electron effective mass produced by the vertical field. ©2008 The Japan Society of Applied Physics

URL: http://apex.ipap.jp/link?APEX/1/024002/
DOI: 10.1143/APEX.1.024002


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